? by semikron b 6 C 125 0996 semitrans ? m igbt modules skd 75 gal 123 d input bridge b6u with brake chopper preliminary data skd 75 gal features round main terminals (2 mm ? ) easy drilling of pcb input diodes glass passivated 1400 v piv, good for 500 v ac high i 2 t rating (inrush current) igbt is latch-up free, homoge- neous silicon-structure high short circuit capability, self limiting to 6 * i cnom fast & soft cal diodes 8) isolated copper baseplate using dcb direct copper bon- ding technology large clearance (9 mm) and creepage distances (13 mm). typical applications: input rectifier bridge (b6u) with brake chopper for pwm inverter drives using semitrans skm 75gd123d 1) t case = 25 c, unless otherwise specified 2) i f = C i c , v r = 600 v, C di f /dt = 500 a/ m s , v ge = 0 v 3) use v geoff = -5 ... - 15 v 8) cal = controlled axial lifetime technology. 9) data d1 - d6, case and mech. data ? b6 - 130 7d-pack = 7 diodes pack absolute maximum ratings values symbol conditions 1) units v ces 1200 v v cgr r ge = 20 k w 1200 v i c t case = 25/80 c 75 / 45 a i cm t case = 25/80 c; t p = 1 ms 140 / 90 a v ges 20 v p tot per igbt/d1/d8, t case =25 c 350 / 125 / 125 w t j , (t stg ) C 40 . . .+150 (125) c v isol ac, 1 min. 2 500 v humidity din 40 040 class f climate din iec 68 t.1 55/150/56 diodes 9) d1-6 d7 d8 i f t case = 80 c9)1530a i fm = C i cm t case = 80 c; t p = 1 ms 30 60 a i fsm t p = 10 ms; sin.; t j = 150 c 600 200 350 a i 2 tt p = 10 ms; t j = 150 c 1800 200 600 a 2 s characteristics symbol conditions 1) min. typ. max. units v (br)ces v ge = 0, i c = 1 ma 3 v ces CCv v ge(th) v ge = v ce , i c = 2 ma 4,5 5,5 6,5 v i ces v ge = 0 t j = 25 c C 0,8 1 ma v ce = v ces t j = 125 c C 3,5 C ma i ges v ge = 20 v, v ce = 0 C C 200 na v cesat i c = 50 a v ge = 15 v; C 2,5(3,1) 3(3,7) v v cesat i c = 75 a t j = 25 (125) c C 3(3,8) C v g fs v ce = 20 v, i c = 25 a 40 C s c chc per igbt C C 350 pf c ies v ge = 0 C 3300 4300 pf c oes v ce = 25 v C 500 650 pf c res f = 1 mhz C 220 300 pf t d(on) v cc = 600 v C 44 100 ns t r v ge = + 15 v / - 15 v 3) C56100ns t d(off) i c = 50 a, ind. load C 380 500 ns t f r gon = r goff = 22 w C70100ns e on t j = 125 cC8Cmws e off C5Cmws inverse diode d7 8) of brake chopper v f = v ec i f = 15 a v ge = 0 v; C 2,0(1,8) 2,5 v v f = v ec i f = 25 a t j = 25 (125) c C 2,3(2,1) C v v to t j = 125 c C 1,1 1,2 v r t t j = 125 c C 45 70 m w i rrm i f = 15 a; t j = 25 (125) c 2) C 12(16) C a q rr i f = 15 a; t j = 25 (125) c 2) C 1(2,7) C m c fwd d8 of "gal" brake chopper 8) v f = v ec i f = 25 a v ge = 0 v; C 2,0 (1,8) 2,5 v v f = v ec i f = 40 a t j = 25 (125) c C 2,3 (2,1) C v v to t j = 125 c C C 1,2 v r t t j = 125 c C 25 44 m w i rrm i f = 25 a; t j = 25 (125) c 2) C 19(25) C a q rr i f = 25 a; t j = 25 (125) c 2) C 1,5(4,5) C m c thermal characteristics r thjc per igbt / diode d1..6 9) C C 0,35 / 1,0 c/w r thjc per diode d7 / d8 C C 1,5 / 1,0 c/w r thch per module C C 0,05 c/w y t y t y t ? ? y ? ? t ? y t ? y t ?
? by semikron b 6 C 126 skd 75 gal 123 d ... 0796
? by semikron b 6 C 127 0796
? by semikron b 6 C 128 skd 75 gal 123 d ... 0796
? by semikron b 6 C 129 0796
? by semikron b 6 C 130 skd 75 gal 123 d 0796
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